Doped TMDC Film Wafer

Specifications:

• Expected to be fully available by December 2020. Now accept pre-ordering…
• In-situ doping during chemical vapor deposition of the film
• Standard dopant: Nb and Re (options of other dopants are available upon request).
• Dopant concentration: < 10% (tunable upon request)
• 100% coverage of growth substrate
• Precise control of layer number with no mixture of layers
• High crystalline quality
• Atomically-smooth surface (< 0.2 nm)
• Perfect Uniformity, Raman intensity variation <10% across the entire substrate
• Polycrystalline film with grain sizes in micrometer range
• Standard substrate options: SiO2/Si w/300 nm or 90 nm thermal oxide and single-side polished sapphire (others available upon request)