Doped TMDC Film Wafer


  • Expected to be fully available by December 2020. Now accept pre-ordering…
  • In-situ doping during chemical vapor deposition of the film
  • Standard dopant: Nb and Re (options of other dopants are available upon request).
  • Dopant concentration: < 10% (tunable upon request)
  • 100% coverage of growth substrate
  • Precise control of layer number with no mixture of layers
  • High crystalline quality
  • Atomically-smooth surface (< 0.2 nm)
  • Perfect Uniformity, Raman intensity variation <10% across the entire substrate
  • Polycrystalline film with grain sizes in micrometer range
  • Standard substrate options: SiO2/Si w/300 nm or 90 nm thermal oxide and single-side polished sapphire (others available upon request)

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